GTVA261701FA-V1-R2

Overview

The GTVA261701FA-V1-R2 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It is designed for high-power radio frequency applications within the 2.62 GHz to 2.69 GHz frequency range. The device delivers an output power of 170 W with a gain of 17 dB. Key electrical specifications include a drain-source breakdown voltage of 150 V and a continuous drain current of 7.5 A. The component operates at a maximum junction temperature of +225°C and utilizes an H-37265J-2 surface-mount package.

Feature Summary

• Utilizes GaN HEMT technology for high efficiency and power density
• Engineered for high output power in S-band frequencies
• Supports high thermal operation up to +225°C
• Features low on-resistance characteristics typical of LDMOS/GaN RF FETs

Applications

• Base station power amplification
• Broadband communication systems
• Military radar transmitters

Procurement Notes

Verify the specific suffix against official MACOM documentation, as variations such as -R0 or -R2 may indicate different reel packaging or minor manufacturing revisions without altering core electrical performance. Confirm RoHS compliance status through the latest datasheet. Ensure the ordering quantity aligns with manufacturer minimum order requirements for tape-and-reel delivery formats.

Selection Notes

Select this component when designing amplifiers requiring 170 W output power in the 2.6–2.7 GHz band. Consider the 150 V breakdown voltage for biasing network design. Evaluate the H-37265J-2 package dimensions for PCB layout compatibility. Compare thermal resistance parameters against system heat sinking capabilities to ensure reliable operation at +225°C maximum junction temperature.

Part Context

This part belongs to MACOM's portfolio of GaN RF power transistors. These devices are engineered to replace traditional LDMOS technologies in high-frequency, high-power applications. The product line emphasizes reliability and linearity for demanding wireless infrastructure environments.

Replacement Considerations

Consult MACOM official substitution guides for direct equivalents. Cross-reference pinouts and thermal pads with alternative GaN HEMTs from other manufacturers if sourcing constraints exist. Verify that any substitute matches the 170 W power class and S-band frequency coverage.