SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GTVA261802FC-V1-R2 is an RF MOSFET HEMT manufactured by MACOM Technology Solutions. It operates within the frequency range of 2.7 GHz to 3.1 GHz and requires a supply voltage of 48V. The device utilizes GaN on SiC technology, offering high power density suitable for demanding RF applications. It is designed for surface mount installation in a single-channel configuration.
Verify the specific suffix variant against official MACOM documentation to ensure compatibility with your design requirements. Confirm that the component meets all necessary environmental compliance standards for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current availability status before finalizing procurement plans.
Select this component when designing circuits operating between 2.7 GHz and 3.1 GHz that require robust GaN-based amplification. Ensure the system can provide the specified 48V supply voltage. Consider the thermal management capabilities required for its power dissipation characteristics. Verify that the SMD package footprint aligns with your PCB layout constraints and assembly processes.
This component belongs to MACOM's portfolio of radio frequency and microwave semiconductor products. It serves the telecommunications, industrial, and defense sectors. The device represents the company's focus on high-performance integrated circuits utilizing advanced material technologies for critical signal generation and amplification tasks in modern electronic systems.
Public confirmed substitute part numbers are not available in the provided source data. Consult MACOM technical support or authorized distributors for verified alternative components that match the electrical specifications and physical dimensions of the GTVA261802FC-V1-R2.