GTVA311801FA-V1-R250

GTVA311801FA-V1-R250

$319.86
  • Description:RF MOSFET HEMT 50V H-37265J-2
  • Series:GaN

SKU:4b6ddbd0dca8 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V H-37265J-2
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:HEMT
  • Frequency:2.7GHz ~ 3.1GHz
  • Gain:15dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:20 mA
  • Power - Output:180W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37265J-2
  • Supplier Device Package:H-37265J-2
  • Configuration:-

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GTVA311801FA-V1-R250

Overview

The GTVA311801FA-V1-R250 is a high-power Gallium Nitride on Silicon Carbide (GaN HEMT) radio frequency power amplifier developed by MACOM Technology Solutions. Designed for robust performance in demanding RF environments, this component operates within the 2.7 GHz to 3.1 GHz frequency range. It delivers an output power of 180 watts and requires a supply voltage of 50 volts. The device utilizes a Pill package configuration, ensuring effective thermal management and mechanical stability for integration into high-frequency transmission systems.

Feature Summary

  • Utilizes advanced GaN-on-SiC technology for superior power density and efficiency
  • Engineered for high linearity and stable operation in wideband applications
  • Features a rugged Pill package designed for efficient heat dissipation

Applications

  • Base station transmitter modules
  • Electronic warfare systems
  • Military communication equipment

Procurement Notes

Verify the specific suffix variant against official MACOM documentation, as ordering codes may denote distinct manufacturing revisions or testing criteria. Confirm current availability status through authorized distributors, noting that certain variants may be subject to restricted distribution channels or end-use verification requirements due to their defense-grade specifications.

Selection Notes

Select this component when designing systems requiring high output power in the L-band spectrum with strict thermal constraints. Ensure the host circuit provides adequate 50-volt biasing and impedance matching networks optimized for the 2.7 to 3.1 GHz range. Evaluate the Pill package footprint against available board space and cooling solutions to maintain junction temperatures within safe operational limits during continuous wave operation.

Part Context

This part belongs to MACOM’s portfolio of high-performance RF power amplifiers leveraging GaN-on-SiC material systems. These devices are engineered to replace older silicon-based technologies, offering higher breakdown voltages and thermal conductivity. The series supports modern communication standards requiring high efficiency and linear amplification in compact form factors suitable for phased array and traditional base station architectures.

Replacement Considerations

Consult MACOM technical support for verified cross-reference data. Direct replacements must match the 180W output, 50V bias, and Pill package dimensions. Verify pinout compatibility and thermal resistance specifications before substitution.

GTVA311801FA-V1-R250GTVA311801FA-V1-R250
$319.86
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