GWM100-0085X1-SMD

Description：MOSFET 6N-CH 85V 103A ISOPLUS
Series：-

SKU:e2caaea74e41 Category: FET, MOSFET Arrays Brand: IXYS

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Product introduction

GWM100-0085X1-SMD is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 6N-CH 85V 103A ISOPLUS. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GWM100-0085X1-SMD

Description：MOSFET 6N-CH 85V 103A ISOPLUS
Series：-
Mfr：IXYS
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：85V
Current - Continuous Drain (Id) @ 25°C：103A
Rds On (Max) @ Id, Vgs：6.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：17-SMD, Gull Wing
Supplier Device Package：ISOPLUS-DIL™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GWM100-0085X1-SMD

GWM100-0085X1-SMD

FET, MOSFET Arrays Overview

The GWM100-0085X1-SMD is a three-phase full bridge module utilizing IXYS trench MOSFET technology. It provides an 85 V drain-source breakdown voltage and supports continuous currents of 103 A at 25°C case temperature, decreasing to 68 A at 110°C. The typical on-chip RDSon is 5.5 mΩ at 25°C, rising to 12.7 mΩ at 125°C. Total gate charge is 114 nC. The device features an isolated DCB ceramic base plate with a thermal resistance (RthJC) of 1.3 K/W. Maximum ratings include ±20 V gate-source voltage and a junction temperature range up to 175°C.

FET, MOSFET Arrays Feature Summary

Integrates six N-channel trench MOSFETs into a single high-current package for space and weight savings.
Features an isolated DCB ceramic base plate optimized for heat transfer and electrical isolation.
Includes auxiliary terminals specifically designed for enhanced MOSFET control.
Supports both soldering and welding connections via available lead forms.

FET, MOSFET Arrays Applications

Electric power steering systems in automobiles
Propulsion drives for industrial vehicles
Starter generator applications
Battery supplied equipment

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code suffix against the manufacturer's current documentation to confirm the SMD lead form configuration. Ensure that external connection limits do not restrict the maximum permissible IRMS per pin, which is rated at 300 A. Confirm compliance with RoHS directives and check for any updates regarding the tentative status of switching parameters before finalizing design integration.

FET, MOSFET Arrays Selection Notes

Select this component when designing three-phase bridges requiring low conduction losses and high current density within a compact footprint. The integrated reverse diode characteristics must be evaluated against specific load requirements. Consider the thermal management capabilities provided by the DCB substrate and verify that the mounting force specifications align with the mechanical assembly constraints of the target application.

FET, MOSFET Arrays Part Context

This module belongs to the X-Class series of power semiconductors from IXYS, characterized by advanced trench technology. It represents a high level of integration compared to discrete solutions, consolidating multiple switches into one unit. The product line targets automotive and industrial sectors where efficiency and reliability under high thermal stress are critical operational requirements.