FET, MOSFET Arrays GWM100-01X1-SMDSAM product image

GWM100-01X1-SMDSAM

  • Description:MOSFET 6N-CH 100V 90A ISOPLUS
  • Series:-

SKU:009813f18b0f Category: Brand:

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GWM100-01X1-SMDSAM is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 6N-CH 100V 90A ISOPLUS. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GWM100-01X1-SMDSAM

  • Description:MOSFET 6N-CH 100V 90A ISOPLUS
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:6 N-Channel (3-Phase Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:90A
  • Rds On (Max) @ Id, Vgs:8.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:17-SMD, Gull Wing
  • Supplier Device Package:ISOPLUS-DIL™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for GWM100-01X1-SMDSAM

GWM100-01X1-SMDSAM

FET, MOSFET Arrays Overview

The GWM100-01X1-SMDSAM is a three-phase full bridge module utilizing IXYS trench MOSFET technology. It integrates six N-channel power devices within an ISOPLUS package designed for high current applications. The component operates with a voltage rating of 100V and supports continuous currents up to 90A per channel, delivering a total module current capacity of 100A. Key electrical characteristics include low on-resistance (RDSon) inherent to the trench architecture, ensuring efficient power conversion. The module employs Direct Bonded Copper (DBC) isolation for robust thermal management and electrical safety in demanding industrial environments.

FET, MOSFET Arrays Feature Summary

  • Integrates six N-channel trench MOSFETs into a single three-phase full bridge configuration
  • Utilizes DBC isolated high current packaging for enhanced thermal dissipation
  • Features low RDSon characteristics typical of trench technology for improved efficiency

FET, MOSFET Arrays Applications

  • Industrial motor drives and control systems
  • Uninterruptible Power Supplies (UPS) inverters
  • Solar micro-inverter and string inverter stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix SAM against the manufacturer's official datasheet to confirm pinout compatibility and thermal pad specifications. Ensure that the procurement documentation explicitly references the ISOPLUS package dimensions and mounting torque requirements. Cross-reference the part number with Littelfuse/IXYS official catalogs to distinguish between standard and specialized variants, as minor suffix changes may affect mechanical or electrical tolerances.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring compact three-phase inversion with high current density. The choice depends on the system's need for integrated gate drive compatibility and the thermal constraints of the heat sink interface. Evaluate the trade-off between the low on-state resistance and switching losses relative to the operating frequency. Confirm that the 100V rating aligns with the DC bus voltage limits of the target power supply circuit.

FET, MOSFET Arrays Part Context

This component belongs to the IXYS MOSFET Modules family, specifically designed for power electronics converters. It represents a consolidation of discrete components into a pre-assembled bridge structure, reducing assembly complexity and parasitic inductance compared to individual transistor implementations. The product line targets mid-power industrial and renewable energy sectors where reliability and thermal performance are critical.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify mechanical footprint compatibility if considering alternative manufacturers. Check electrical parameter margins, particularly VDS and ID ratings, when evaluating generic equivalents.

GWM100-01X1-SMDSAMGWM100-01X1-SMDSAM

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