GWM120-0075P3-SMD

FET, MOSFET Arrays Overview

The GWM120-0075P3-SMD is a three-phase full bridge module utilizing Trench MOSFET technology. It features a DCB isolated high current package with surface mount device leads. Key electrical parameters include a drain-source breakdown voltage (VDSS) of 75 V and a continuous drain current (ID25) of 118 A at TC = 25°C. The typical on-state resistance (RDSon) is 3.7 mΩ at TVJ = 25°C, rising to 8.4 mΩ at TVJ = 125°C. The integrated reverse diode supports an average forward current (IF25) of 120 A. Thermal characteristics specify a junction-to-case thermal resistance (RthJC) of 1.3 K/W.

FET, MOSFET Arrays Feature Summary

• Integrates six Trench MOSFETs into a single three-phase full bridge configuration for high-level circuit integration.
• Features an optimized intrinsic reverse diode designed for low conduction losses and efficient switching performance.
• Utilizes a DCB isolated ceramic base plate to provide electrical isolation and optimized heat transfer capabilities.
• Includes auxiliary terminals specifically designed for direct MOSFET control signal routing.

FET, MOSFET Arrays Applications

• Electric power steering systems in automobiles
• Propulsion drives for industrial vehicles
• Starter generator applications
• Battery supplied equipment

FET, MOSFET Arrays Procurement Notes

Verify the specific lead form configuration required for the assembly process. The datasheet indicates that the SMD variant utilizes surface mount device leads distinct from straight or bent lead options. Confirm that the ordering code matches the intended mechanical footprint before finalizing procurement to ensure compatibility with the printed circuit board design.

FET, MOSFET Arrays Selection Notes

Select this component when a compact three-phase solution is required for 75 V systems. The Trench MOSFET technology offers lower on-state resistance compared to planar alternatives. Ensure the application environment allows for the specified operating temperature range and verify that the thermal management system can handle the rated power dissipation at the expected case temperatures.

FET, MOSFET Arrays Part Context

This module belongs to the GWM series of three-phase bridges manufactured by IXYS. The series is characterized by high current capability and space-saving designs suitable for automotive and industrial traction applications. The GWM120-0075P3 represents the 75 V rating within this family, providing a specialized solution for low-voltage high-current motor control scenarios.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance values if considering alternative manufacturers' modules for retrofitting existing designs.

FET, MOSFET Arrays FAQ

What is the maximum RMS current per pin in the main current paths?

The IRMS per pin in the main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections, but the module supports up to 300 A.

How does the on-state resistance change with temperature?

The typical RDSon increases from 3.7 mΩ at a junction temperature of 25°C to 8.4 mΩ at a junction temperature of 125°C.

What is the isolation voltage of the module?

The isolation voltage is 1000 V~ measured at less than 1 mA leakage current at 50/60 Hz for one minute.