GWM220-004P3-SL SAM

FET, MOSFET Arrays Overview

The IXYS GWM220-004P3-SAM is a three-phase full bridge module utilizing Trench MOSFET technology in a DCB isolated high current package. It features a drain-source breakdown voltage of 40 V and a continuous drain current of 180 A at 25°C case temperature. The typical on-chip level drain-source resistance is 2.0 mΩ at 25°C, rising to 3.2 mΩ at 125°C. Gate charge is typically 94 nC at 10 V gate-source voltage. The module supports an isolation voltage of 1000 Vrms and operates within a junction temperature range of -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Integrates six N-channel Trench MOSFETs into a single three-phase full bridge configuration for high-level integration.
• Features an optimized intrinsic reverse diode with low forward voltage drop characteristics.
• Utilizes a ceramic DCB base plate providing electrical isolation and optimized heat transfer capabilities.
• Includes auxiliary terminals specifically designed for enhanced MOSFET control signal routing.

FET, MOSFET Arrays Applications

• AC drives
• Electric power steering systems in automobiles
• Starter generator applications
• Propulsion drives for industrial vehicles
• Battery supplied equipment

FET, MOSFET Arrays Procurement Notes

Verify the specific lead form suffix required for the application, as straight leads (SL), bent leads (BL), and surface mount (SMD) options exist. Confirm that the 40 V rating aligns with system requirements. Ensure thermal interface material compatibility with the specified thermal resistance values. Check for updated datasheet revisions regarding test conditions and dimensions before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a compact three-phase bridge solution is needed for low-voltage, high-current applications. The Trench MOSFET technology offers lower conduction losses compared to planar alternatives. Consider the 180 A continuous current capability and the 300 A maximum RMS per pin rating for load matching. Evaluate the thermal management strategy based on the provided junction-to-case thermal resistance values.

FET, MOSFET Arrays Part Context

This module belongs to the GWM series of high-power discrete semiconductor modules from IXYS. It represents a specialized packaging solution combining multiple power switches into a unified unit. The design focuses on minimizing parasitic inductances and maximizing current handling capacity through its specific terminal layout and internal die arrangement.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify mechanical footprint and pinout compatibility if considering alternative manufacturers' three-phase modules.

FET, MOSFET Arrays FAQ

What is the maximum isolation voltage between the mounting tab and the pins?

The module supports an isolation voltage of 1000 Vrms at 50/60 Hz for one minute with leakage current less than 1 mA.

How does the drain-source resistance change with temperature?

The typical RDS(on) increases from 2.0 mΩ at a junction temperature of 25°C to 3.2 mΩ at 125°C.

What are the available lead form options for this module?

Three lead forms are available: straight leads (SL), bent leads (BL), and a surface mount device version (SMD).