GWS9294

Description：MOSFET 2N-CH 20V 10.1A 4QFN
Series：-

SKU:22c5066d5944 Category: FET, MOSFET Arrays Brand: Renesas Electronics Corporation

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Product introduction

GWS9294 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET 2N-CH 20V 10.1A 4QFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GWS9294

Description：MOSFET 2N-CH 20V 10.1A 4QFN
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：10.1A (Ta)
Rds On (Max) @ Id, Vgs：13mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds：900pF @ 10V
Power - Max：3.6W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：4-VDFN
Supplier Device Package：4-QFN (2x2)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GWS9294

GWS9294

FET, MOSFET Arrays Overview

The GWS9294 is a dual N-channel power MOSFET designed for Li-ion battery protection in handheld devices. It features a 2mm x 2mm MLPD package with a maximum thickness of 1mm, providing high power density and low thermal resistance. The device offers a drain-to-source breakdown voltage of 20V minimum and a typical on-state resistance (rDS(ON)) of 12mΩ at VGS = 4.5V. It includes integrated gate diodes providing 2.5kV HBM ESD protection. Operating temperature range spans from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Monolithic dual MOSFET configuration in a compact 2mm x 2mm MLPD package
Low rDS(ON) combined with ultra-low gate charge and figure of merit
Integrated gate diodes provide 2.5kV Human Body Model ESD protection
Rated for short-circuit and overcurrent protection applications

FET, MOSFET Arrays Applications

Li-ion battery protection circuits
Portable devices and cell phones
Personal Digital Assistants (PDA)
Short-circuit and overcurrent protection systems

FET, MOSFET Arrays Procurement Notes

Verify the component status as Intersil products may be subject to discontinuation or lifecycle changes. Confirm RoHS compliance and specific ordering suffixes against current manufacturer documentation before procurement. Ensure handling procedures account for electrostatic discharge sensitivity during installation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high power density in minimal board space. Consider the 20V breakdown voltage and 12mΩ typical on-resistance for efficient switching. Evaluate thermal performance based on the specified junction-to-ambient resistance values for steady-state and transient conditions.

FET, MOSFET Arrays Part Context

The GWS9294 belongs to the Intersil portfolio of power management solutions. It is specifically engineered for mobile computing and consumer electronics markets where size constraints are critical. The device integrates two N-channel MOSFETs into a single small-outline package to optimize system footprint.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement lists for discontinued Intersil components. Verify pin compatibility and electrical parameters such as rDS(ON) and package dimensions when selecting alternative dual MOSFETs.