HAS175M12BM3

$493.17

Description：MOSFET 2N-CH 1200V 175A
Series：-

SKU:9f0ef04f9fea Category: FET, MOSFET Arrays Brand: Wolfspeed, Inc.

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Product introduction

HAS175M12BM3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Wolfspeed, Inc.. Its product description is MOSFET 2N-CH 1200V 175A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HAS175M12BM3

Description：MOSFET 2N-CH 1200V 175A
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：175A
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for HAS175M12BM3

HAS175M12BM3

FET, MOSFET Arrays Overview

The HAS175M12BM3 is a Silicon Carbide half-bridge module rated for 1200 V and 175 A. It features a drain-source breakdown voltage of 1200 V, a typical on-state resistance of 10.4 mΩ at 25°C, and a forward voltage of 1.8 V. The recommended gate-source voltage is -4 V to +15 V, with a maximum transient rating of -10 V to +23 V. Continuous drain current reaches 234 A at 25°C case temperature. Operating junction temperature spans from -40°C to 150°C continuously, with intermittent capability up to 175°C. The module utilizes a copper baseplate and aluminum nitride insulator within an industry-standard 62 mm footprint.

FET, MOSFET Arrays Feature Summary

Compliant with EN45545-2 R22/23 HL3 standards
High humidity operation verified via THB-80 testing
Low inductance design optimized for SiC switching
Normally-off fail-safe device operation

FET, MOSFET Arrays Applications

Railway auxiliary and traction systems
Induction heating equipment
Motor drives
Renewables energy converters
EV fast charging stations

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. The HAS175M12BM3 variant does not include pre-applied phase change thermal interface material. The HAS175M12BM3T variant includes this material. Confirm the exact part number matches the required thermal configuration before placing orders to ensure compatibility with system cooling designs.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high power density and low switching losses. Ensure the gate driver supports the recommended -4 V to +15 V operating range. Verify that the system can handle the stray inductance of 11.1 nH. Check thermal management capabilities against the 0.190 °C/W junction-to-case thermal resistance for continuous operation at 150°C.

FET, MOSFET Arrays Part Context

This component belongs to the BM3 family of Wolfspeed silicon carbide modules. It shares the standard 62 mm form factor with other modules in the series, facilitating system retrofitting. The BM3 platform is designed to maximize the benefits of silicon carbide technology while maintaining robust packaging and simple power bussing for demanding industrial environments.

FET, MOSFET Arrays Replacement Considerations

The CAS110M12BM2 is listed as a recommended replacement for older designs, though it is not recommended for new designs. Verify pinout compatibility and electrical ratings when substituting. The HAS175M12BM3 offers higher current ratings compared to some legacy variants.