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HAT3004RJ-EL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is NCH/PCH PWR MOSFET 30V 5.5A 65MO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HAT3004RJ-EL-E
- Description：NCH/PCH PWR MOSFET 30V 5.5A 65MO
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HAT3004RJ-EL-E
FET, MOSFET Arrays Overview
The HAT3004RJ-EL-E is a dual-channel power switching component manufactured by Renesas Electronics Corporation. It integrates one N-channel and one P-channel silicon MOSFET within a single SOP-8 package, designed for high-speed power switching applications. The device supports a drain-source voltage of 30V and provides continuous current handling capabilities up to 5.5A. Key electrical characteristics include a typical input capacitance of 310pF and an on-resistance of 65mΩ. This configuration allows for efficient control in compact circuit designs requiring complementary switching actions.
FET, MOSFET Arrays Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs into a single dual-channel unit
- Engineered for high-speed power switching operations
- Utilizes a compact SOP-8 surface-mount package for space-constrained designs
FET, MOSFET Arrays Applications
- Industrial control systems requiring compact switching solutions
- Consumer electronics with limited board space
- General-purpose power management circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix 'J' against official Renesas documentation to confirm package variant and tape-and-reel specifications. Ensure compatibility with SOP-8 footprint requirements. Cross-reference part numbers carefully as distributor listings may vary in accuracy. Confirm lead-free status and environmental compliance through the manufacturer's datasheet before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component when a matched N/P channel pair is required for synchronous or complementary switching. The 30V rating suits low-voltage DC applications. Consider the 65mΩ resistance for thermal management needs. The dual-channel integration reduces component count compared to discrete alternatives. Verify that the 5.5A current rating meets the load requirements of the target application without exceeding safe operating area limits.
FET, MOSFET Arrays Part Context
This part belongs to Renesas' portfolio of discrete power semiconductors. It serves as a building block for motor drivers, relay replacements, and load switches. The dual-MOSFET design simplifies layout by reducing the number of individual components needed for bridge or half-bridge configurations. It complements other Renesas logic and driver ICs in complete power control solutions.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas official cross-reference tools for verified equivalents. Ensure any replacement matches the 30V/5.5A ratings and SOP-8 package dimensions. Verify pinout compatibility before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
