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The HFA3046B is an ultra-high frequency NPN transistor array fabricated using the Renesas complementary bipolar UHF-1 process. It integrates five dielectrically isolated transistors on a common monolithic substrate within a 14-pin SOICN package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 8 V, a collector-base voltage (VCBO) of 12 V, and a maximum DC collector current of 65 mA. The device exhibits a transition frequency (fT) of 8 GHz and a noise figure of 3.5 dB. It operates within a temperature range of -55°C to +125°C with a maximum power dissipation of 150 mW.
Verify the specific suffix designation when ordering, as the HFA3046BZ variant includes annealing processes and lead-free plating. Confirm moisture sensitivity level (MSL 3) and storage conditions upon receipt. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability for military-grade specifications.
Select this component for designs requiring matched NPN pairs or quintuplets at UHF frequencies. The 8 GHz fT supports operations well beyond standard RF ranges. Consider the 14-pin SOICN package constraints for PCB layout. Verify that the 8 V VCEO rating aligns with the system's peak voltage requirements to prevent breakdown.
The HFA3046B belongs to the HFA3046/HFA3096/HFA3127/HFA3128 family of ultra-high frequency transistor arrays. While the HFA3046 series consists entirely of NPN transistors, other family members like the HFA3096 combine NPN and PNP types. This family shares the same UHF-1 fabrication process and monolithic architecture.
Direct replacements within the same family include the HFA3046BZ. For mixed NPN/PNP requirements, consider the HFA3096. All-PNP configurations are available via the HFA3128. Verify pinout compatibility and thermal characteristics before substituting.