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The HFA3046B96 is an RF bipolar transistor array manufactured by Renesas Electronics Corporation. It integrates five NPN transistors within a single SOIC-14 narrow package, designed for high-frequency applications up to 8 GHz. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 8 V, a collector-base voltage (VCBO) of 12 V, and an emitter-base voltage (VEBO) of 5.5 V. The device supports a continuous collector current of 65 mA with a DC current gain (hFE) ranging from 40 to 40 at specified test conditions. Operating temperatures span from -55°C to +125°C, ensuring reliability in harsh environments.
Verify the specific suffix B96 against official Renesas documentation to confirm packaging details such as cut tape or reel quantities. Confirm RoHS compliance status as historical data indicates potential non-compliance for certain variants. Ensure the source document explicitly lists HFA3046B96 rather than generic family members before finalizing procurement decisions.
Select this component when designing circuits requiring integrated multi-transistor solutions for RF frequencies up to 8 GHz. Consider the 14-pin SOIC package constraints and the 8 V VCEO limit during schematic design. Verify that the 65 mA collector current meets the load requirements of the intended amplifier or mixer stage without exceeding thermal dissipation limits.
This part belongs to the HFA3046/3127 family of ultra-high frequency transistor arrays produced by Intersil, now part of Renesas. These devices are specifically characterized for harsh environment applications and often align with MIL-STD-883 qualification levels. The family provides consolidated RF functionality compared to discrete transistor implementations.
Publicly confirmed substitute part numbers for HFA3046B96 are not available in the provided reference material. Consult manufacturer obsolescence notices or technical support for direct equivalents if this specific suffix is unavailable.