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The HFA3096B is an RF bipolar transistor array manufactured by Renesas Electronics (formerly Intersil). It integrates five discrete silicon transistors within a single package: three NPN and two PNP types. The device operates in the Ultra High Frequency band, with transition frequencies specified at 5.5 GHz and 8 GHz depending on the specific transistor element. It features a maximum collector-emitter voltage of 12 V or 15 V and supports a continuous collector current of 65 mA. Power dissipation is rated at 150 mW. The component is housed in a 16-pin SOIC narrow package and is designed for harsh environment applications.
Verify the exact voltage rating variant (12V or 15V) required for the specific design application, as datasheets indicate multiple voltage configurations for this part number. Confirm moisture sensitivity level handling procedures during assembly, as the component is classified as moisture sensitive. Ensure the selected package type matches the PCB footprint requirements for the 16-pin SOIC narrow form factor.
Select this component when a mixed NPN/PNP transistor array is needed for UHF applications. Consider the 150 mW power dissipation limit and the 65 mA maximum collector current when designing bias networks. Verify that the operating temperature range of -55°C to +125°C meets the environmental constraints of the target system.
The HFA3096B belongs to the HFA3096 series of RF bipolar transistor arrays from Intersil/Renesas. This series includes variants such as the HFA3096BZ and HFA3096BZ96, which share similar functional architectures but may differ in packaging, lead finish, or specific electrical tolerances. These devices are typically used in high-frequency analog and RF circuits.
Direct replacements include the HFA3096BZ and HFA3096BZ96. Verify pinout compatibility and specific voltage ratings before substitution, as variations exist within the series regarding collector-emitter breakdown voltages and package styles.