HFA3096BZ96

Overview

The HFA3096BZ96 is an RF bipolar transistor array manufactured by Renesas Electronics, belonging to the HFA3096 series. It integrates five silicon transistors configured as three NPN and two PNP units within a single package. The device operates at frequencies up to 5.5 GHz for NPN and 8 GHz for PNP types. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 8 V, an emitter-base voltage (VEBO) of 5.5 V, and a continuous collector current of 65 mA. The minimum DC current gain (hFE) is specified at 40. Power dissipation is rated at 150 mW, with an operating temperature range from -55°C to +125°C. It is housed in a 16-lead SOIC-Narrow package.

Feature Summary

• Integrates a mixed polarity configuration of three NPN and two PNP transistors for compact circuit design.
• Engineered for ultra-high frequency applications with transition frequencies reaching 8 GHz.
• Features low noise characteristics suitable for sensitive RF signal processing.
• Constructed with annealed lead technology for enhanced reliability in harsh environments.

Applications

• Ultra High Frequency (UHF) amplifier stages
• RF mixer circuits requiring mixed polarity supplies
• Low noise amplification in communication systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level prior to soldering. Ensure storage conditions adhere to humidity restrictions to prevent package damage. Cross-reference datasheet revisions to confirm parameter consistency with design requirements.

Selection Notes

Select this component when a mixed NPN/PNP array is required in a small surface-mount footprint. Compare against the standard HFA3096BZ variant regarding packaging format; the suffix '96' typically indicates tape and reel delivery. Verify that the 8 V VCEO rating meets the circuit's voltage headroom needs. Consider the 150 mW power dissipation limit for thermal management in the SOIC-16 package.

Part Context

This part belongs to the Intersil/HFA3096 family of UHF transistor arrays, later produced under Renesas Electronics following corporate acquisitions. It shares architectural similarities with the HFA3046 but offers mixed polarity functionality. The device is designed for military-grade harsh environment applications, often featuring annealed leads for superior solderability and long-term stability compared to standard commercial variants.

Replacement Considerations

The HFA3096BZ is the tube-packaged equivalent of this component. For pin-compatible alternatives, evaluate the HFA3046BZ, though it contains only NPN transistors. Verify that any substitute matches the 16-pin SOIC-N narrow outline and maintains comparable high-frequency performance specifications.