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The HFA3102B is an all-NPN transistor array configured as dual differential amplifiers with tail transistors. Based on the Intersil bonded wafer UHF-1 SOI process, it achieves a transition frequency (fT) of 10 GHz and a power gain-bandwidth product of 5 GHz. The device maintains excellent hFE and VBE matching characteristics over temperature, with collector leakage currents under 0.01 nA. It operates within a temperature range of -40°C to +85°C and features a minimum DC current gain (hFE) of 40. Maximum ratings include a collector-emitter voltage (VCEO) of 8 V, an emitter-base voltage (VEBO) of 12 V, and a continuous collector current of 30 mA.
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance and lead-free annealing specifications. Check moisture sensitivity level requirements before storage and handling. Validate package integrity for SOIC-14 configuration. Ensure design-in compatibility with existing circuit parameters.
Select this component for applications requiring high-speed differential signal processing with tight matching constraints. Consider the 10 GHz fT limit for frequency planning. Evaluate thermal management needs given the 250 mW power dissipation rating. Verify that the 8 V VCEO rating suits the supply voltage environment.
The HFA3102B belongs to the HFA3102 series of RF bipolar transistor arrays manufactured by Renesas/Intersil. It utilizes the UHF-1 SOI process technology. The part is functionally similar to the UPA102G but offers specific integration benefits in a single package.
The UPA102G is documented as a pin-to-pin compatible alternative. Verify electrical parameter equivalence before substitution.