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Product Detailed Parameters
- Description：RF TRANS 5 NPN 12V 8GHZ 16-SOIC
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- Transistor Type：5 NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：3.5dB @ 1GHz
- Gain：-
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 10mA, 2V
- Current - Collector (Ic) (Max)：65mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：16-SOIC
- Grade：-
- Qualification：-
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Overview
The HFA3127B96-HC is a bipolar RF transistor manufactured by Harris Corporation, classified as an ultra-high frequency NPN device. It features a 16-SOIC surface-mount package with a maximum collector-emitter breakdown voltage of 12V and a maximum collector current of 65mA. The component operates at a transition frequency of 8GHz with a typical noise figure of 3.5dB at 1GHz. Maximum power dissipation is rated at 150mW, and the DC current gain is specified as 40 at 10mA and 2V. The junction temperature rating reaches 150°C.
Feature Summary
- Ultra-high frequency operation capability up to 8GHz for RF signal processing
- Low noise performance with a typical noise figure of 3.5dB at 1GHz
- Surface-mount construction in a 16-SOIC package for automated assembly integration
Applications
- RF amplifier circuits requiring high-frequency signal amplification
- Communication systems utilizing ultra-high frequency bands
- Test and measurement equipment operating at microwave frequencies
Procurement Notes
Verify manufacturer authenticity through authorized channels due to discontinued status. Confirm RoHS compliance requirements as the component may not meet current environmental standards. Check datasheet revisions for parameter variations. Ensure storage conditions maintain moisture sensitivity level 1 integrity. Validate pinout compatibility before integration into existing designs.
Selection Notes
Evaluate thermal management capabilities given the 150mW power limit and 16-SOIC footprint. Assess circuit impedance matching requirements against the 8GHz transition frequency specification. Consider the 12V breakdown voltage constraint for biasing networks. Review noise figure specifications relative to system sensitivity needs. Compare physical dimensions against available PCB space constraints.
Part Context
This component belongs to the HFA3127 series of bipolar RF transistors originally developed by Harris Corporation, now associated with L3Harris Technologies. The series targets ultra-high frequency applications requiring small-signal amplification. The HFA3127B96 variant represents a specific configuration within this family, distinguished by its 16-lead SOIC packaging and specific electrical characteristics optimized for RF environments.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The component status is listed as obsolete or discontinued. Designers should consult official manufacturer resources for potential obsolescence management strategies or approved alternative components that match the required electrical specifications.
