HFA3127RZ

HFA3127RZ

$6.20
  • Description:RF TRANS 5 NPN 12V 8GHZ 16-QFN
  • Series:-

SKU:df42dc371853 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS 5 NPN 12V 8GHZ 16-QFN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Transistor Type:5 NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):3.5dB @ 1GHz
  • Gain:-
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 2V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-VFQFN Exposed Pad
  • Supplier Device Package:16-QFN (3x3)
  • Grade:-
  • Qualification:-

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HFA3127RZ

Overview

The HFA3127RZ is an ultra-high frequency transistor array fabricated using the Renesas complementary bipolar UHF-1 process. It integrates five dielectrically isolated NPN transistors on a common monolithic substrate, providing close electrical and thermal matching. The device operates at a transition frequency of 8 GHz with a typical noise figure of 3.5 dB. Key electrical parameters include a maximum collector-emitter voltage of 8 V, a continuous collector current of 65 mA, and a power dissipation of 150 mW. It features a minimum DC current gain of 40 and is housed in a 16-QFN (3x3) package.

Feature Summary

  • Monolithic construction ensures tight electrical and thermal matching among the five integrated transistors.
  • Dielectric isolation provides independent access to all terminals for each individual transistor.
  • Low noise characteristics support high-frequency amplifier and mixer applications.

Applications

  • VHF/UHF Amplifiers
  • VHF/UHF Mixers
  • IF Converters
  • Synchronous Detectors

Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm RoHS compliance details as specifications may vary by manufacturing lot. Check moisture sensitivity levels and storage conditions prior to assembly. Validate pin compatibility if replacing legacy components in existing designs.

Selection Notes

Select this component for designs requiring matched RF performance in compact footprints. Ensure the 16-QFN package fits the PCB layout constraints. Verify that the 8 V voltage rating meets circuit requirements. Consider the 150 mW power dissipation limit for thermal management strategies.

Part Context

The HFA3127RZ belongs to the HFA3127 series of ultra-high frequency transistor arrays. It shares the same core technology and functional architecture with variants such as the HFA3127R and HFA3127BZ. These devices are designed for high-performance RF applications where size and matching precision are critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate pin-compatible alternatives within the HFA3046 or HFA3096 families only if electrical parameters align with specific design needs.

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