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Product Detailed Parameters
- Description：RF TRANS 2 NPN 9V 8.5GHZ 6-SOT
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max)：9V
- Frequency - Transition：8.5GHz
- Noise Figure (dB Typ @ f)：2.4dB @ 1GHz
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：48 @ 10mA, 2V
- Current - Collector (Ic) (Max)：26mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：6-SOT
- Grade：-
- Qualification：-
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Overview
The HFA3134IH96 is an RF bipolar transistor array manufactured by Renesas Electronics, formerly Intersil. It features a dual NPN configuration housed in a compact SOT-23 package. The device is designed for high-frequency applications with a maximum operating frequency of 7 GHz. Key electrical specifications include a collector-emitter voltage (VCEO) of 11 V and an emitter-base voltage (VEBO) of 4.5 V. The continuous collector current is rated at 26 mA, with a minimum DC current gain (hFE) of 15. It operates within a temperature range of -40°C to +85°C.
Feature Summary
- Dual matched NPN transistor configuration optimized for RF performance
- High-speed operation capability up to 7 GHz
- Compact surface-mount SOT-23 packaging for space-constrained designs
Applications
- RF signal processing circuits
- High-frequency amplification stages
- Wireless communication systems
Procurement Notes
Verify the exact part number suffix against official Renesas documentation, as variations such as HFA3134IHZ96 may indicate specific tape-and-reel packaging or annealing treatments. Confirm moisture sensitivity levels and RoHS compliance status prior to ordering. Ensure compatibility with automated pick-and-place equipment due to the small SOT-23 form factor.
Selection Notes
Select this component when a matched dual NPN pair is required for balanced RF circuit topologies. Consider the 26 mA current limit and 11 V voltage rating during biasing design. Compare against similar HFA series devices if higher power handling or different pin configurations are needed. Verify thermal management requirements for the small outline package.
Part Context
This component belongs to the HFA313x series of RF bipolar transistors from Renesas/Intersil. It is functionally related to the HFA3135, which offers a complementary PNP configuration. Both devices share similar high-frequency characteristics and packaging, allowing for potential differential pair implementations in RF front-end modules.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official Renesas cross-reference guides or contact manufacturer support directly for validated alternatives.
