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Product Detailed Parameters
- Description：IGBT NPT 1200V 35A TO-263
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 10A
- Power - Max：298 W
- Switching Energy：320µJ (on), 800µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：23ns/165ns
- Test Condition：960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The HGT1S10N120BNS is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 35 A at 25°C. The device utilizes silicon technology and is housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.45 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 298 W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Single N-channel IGBT configuration for high-voltage switching applications
- Robust thermal performance with 298 W power dissipation capability in TO-247-3 package
- High voltage blocking capability rated at 1200 V
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- Switched-mode power supplies (SMPS)
- Welding equipment
Procurement Notes
Verify the specific suffix 'BNS' against official manufacturer documentation to confirm exact binning or variant specifications. Confirm RoHS compliance status as datasheets may vary by production batch. Check for obsolescence notices or lifecycle changes directly from onsemi before finalizing procurement plans.
Selection Notes
Select this component for designs requiring 1200 V blocking voltage and 35 A continuous current handling. Ensure the thermal management system can dissipate up to 298 W. Verify that the gate drive circuit supports the specified ±20 V limits. Compare saturation voltage characteristics against alternative IGBTs for efficiency optimization in the target application.
Part Context
This part belongs to onsemi's discrete IGBT portfolio, designed for medium-to-high power conversion. It complements other devices in the series offering various voltage and current ratings. The TO-247-3 package is standard for through-hole mounting in industrial power electronics, providing reliable mechanical stability and thermal conductivity for demanding environments.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Potential alternatives may include other 1200 V, 35 A IGBTs in TO-247 packages from onsemi or other manufacturers. Ensure pinout compatibility and electrical parameter equivalence before substitution.
