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Product Detailed Parameters
- Description：IGBT 600V 24A TO-262
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：96 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 15A
- Power - Max：104 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：62 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262 (I2PAK)
- Grade：-
- Qualification：-
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Overview
The HGT1S12N60C3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series, manufactured by onsemi. It integrates an anti-parallel hyperfast diode within a TO-263AB surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 104 W. The component operates within a junction temperature range of -40°C to +150°C.
Feature Summary
- Combines high input impedance MOS gate control with low conduction loss bipolar characteristics
- Integrates an anti-parallel hyperfast recovery diode for efficient switching applications
- Designed for rugged performance with short circuit rating capabilities
Applications
- High-frequency power switching circuits
- Motor drive inverter modules
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the manufacturer origin carefully as this part was originally developed by Harris Corporation and later acquired by Fairchild Semiconductor, which was subsequently acquired by onsemi. Confirm the specific datasheet revision and marking code to ensure compatibility with legacy designs referencing the original Harris or Fairchild specifications.
Selection Notes
Select this component for applications requiring a robust single IGBT with an integrated fast recovery diode in a surface-mount form factor. Ensure thermal management solutions accommodate the 104 W power dissipation limit. Verify that the 600V blocking voltage and 24A current ratings exceed the peak operational demands of the target circuit.
Part Context
This device belongs to the UFS Series of N-channel IGBTs, representing a transition period in semiconductor manufacturing history involving Harris Corporation, Fairchild Semiconductor, and onsemi. It serves as a discrete solution for medium-power switching tasks where through-hole packages are not feasible but higher current handling than standard logic-level MOSFETs is required.
Replacement Considerations
Public confirmed substitute part numbers include HGTP12N60C3DR and HGTG12N60C3DR. These variants share identical electrical characteristics and pinouts but differ in packaging configuration, utilizing tape-and-reel formats suitable for automated surface-mount assembly processes.
