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Product Detailed Parameters
- Description：IGBT 600V 24A I2PAK
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：48 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 12A
- Power - Max：104 W
- Switching Energy：400µJ (on), 340µJ (off)
- Input Type：Standard
- Gate Charge：71 nC
- Td (on/off) @ 25°C：37ns/120ns
- Test Condition：480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：I2PAK (TO-262)
- Grade：-
- Qualification：-
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Overview
The HGT1S12N60C3R is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C. The device utilizes the Ultra Fast Soft (UFS) technology to minimize switching losses and electromagnetic interference. It is housed in a TO-263AB surface-mount package, designed for high-power applications requiring efficient thermal management and robust performance under high-voltage conditions.
Feature Summary
- Ultra Fast Soft (UFS) technology for reduced switching noise
- Low conduction loss characteristics
- High thermal stability with collector connected to the tab
Applications
- Switching power supplies
- Motor control drives
- Inverter circuits
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential legacy status. Confirm RoHS compliance and specific suffix variations against official datasheets before procurement. Ensure storage conditions meet moisture sensitivity level requirements to prevent package damage prior to soldering.
Selection Notes
Select this component for designs requiring 600V blocking capability with moderate current handling up to 24A. Consider the TO-263AB package for surface-mount assembly constraints. Evaluate thermal resistance requirements relative to the application's duty cycle and ambient temperature to ensure junction temperatures remain within safe operating limits during continuous operation.
Part Context
This IGBT belongs to the HGT1S12N60 series, representing a generation of high-speed switching devices developed by Harris Semiconductor. The series was later integrated into Fairchild Semiconductor and subsequently onsemi product portfolios. The part number indicates specific pinout and packaging configurations distinct from through-hole variants like the HGTP series.
Replacement Considerations
Equivalent parts include the HGTP12N60C3D (TO-220AB package) for through-hole replacements and the HGT1S12N60A4S9A for higher current density needs. Verify pin compatibility and thermal pad dimensions when substituting across different package types.
