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Product Detailed Parameters
- Description：27A, 600V, UFS N-CHANNEL IGBT
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The HGT1S12N60C3S9AR4501 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, belonging to the UFS Series. It features a single N-channel configuration with a built-in anti-parallel ultrafast diode. The device is rated for a maximum collector current of 24 A and a collector-emitter breakdown voltage of 600 V. It utilizes a TO-263AB surface-mount package, also identified as R-PSSO-G2, with a rectangular plastic/epoxy body and gull-wing terminals. The component is designed for low conduction loss and ultra-fast switching performance.
Feature Summary
- Integrated anti-parallel ultrafast diode for simplified circuit design
- Rugged construction optimized for high-power switching applications
- Low conduction loss characteristics for improved efficiency
- Ultra-fast switching speed suitable for high-frequency operation
Applications
- High-frequency power supplies
- Motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the manufacturer origin, as Fairchild Semiconductor's discrete semiconductor division was acquired by onsemi. Confirm that the specific suffix S9AR4501 corresponds to the standard HGT1S12N60C3DRS9A datasheet specifications without functional deviations. Ensure the component matches the TO-263AB package outline and terminal configuration before integration into designs requiring precise thermal or mechanical constraints.
Selection Notes
Select this component when a rugged N-channel IGBT with an integrated ultrafast recovery diode is required for 600V applications. The 24A continuous current rating and TO-263AB package make it suitable for surface-mount designs where space and thermal management are critical. Compare against other UFS series variants if different current ratings or packaging options are needed for the specific power stage topology.
Part Context
This part belongs to the HGT G12N60C3DR family of 24A, 600V rugged IGBTs with anti-parallel ultrafast diodes. Related parts in this series include HGTP12N60C3DR and HGTG12N60C3DR, which share similar electrical characteristics but may differ in packaging or specific commercial suffixes. The series is characterized by its combination of low conduction loss and fast switching capabilities.
Replacement Considerations
Direct substitutes within the same series include HGTP12N60C3DR and HGTG12N60C3DR. Verify pinout compatibility and thermal resistance values when replacing with these equivalents to ensure identical performance in the target application.
