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The HGT1S14N41G3VLT is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a single N-channel configuration with a built-in diode and resistor, housed in a TO-263AB (D2PAK-3) package. The device supports a maximum collector current of 27 A and a collector-emitter breakdown voltage of 490 V. Key electrical parameters include a maximum gate-emitter threshold voltage of 2.5 V, a maximum gate-emitter voltage of 10 V, and a maximum fall time of 15000 ns. The component is rated for operation at temperatures up to 175 °C.
Verify the specific suffix 'VLT' against official Fairchild documentation to confirm tape-and-reel packaging specifications. Ensure compliance requirements are checked as the source data indicates non-RoHS status. Confirm lead times and availability directly with authorized distributors or the manufacturer, as these details are not provided in the component datasheet.
Select this component for applications requiring a 490 V blocking voltage and 27 A current handling in a surface-mount D2PAK form factor. Consider the integrated resistor and diode functionality to simplify circuit design. Verify that the 15000 ns fall time meets the switching speed requirements of the target application compared to faster alternatives.
This part belongs to the Fairchild HGT series of high-power IGBTs. The 'G3' designation typically relates to specific environmental or manufacturing process revisions within the product line. The TO-263AB package provides a balance between power handling capacity and surface-mount convenience for medium-power electronics.
Publicly confirmed substitute part numbers for the HGT1S14N41G3VLT were not identified in the available verified source material. Cross-reference with other Fairchild IGBTs in the same voltage and current class if direct substitution is required.