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Product Detailed Parameters
- Description：IGBT 375V 20A TO-263
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：375 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.8V @ 5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：28.7 nC
- Td (on/off) @ 25°C：-/15µs
- Test Condition：300V, 10A, 25Ohm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The HGT1S20N35G3VLS is a 20A, 350V N-Channel Logic Level Voltage Clamping IGBT manufactured by onsemi. It features an internal active voltage clamp between the collector and gate to provide Self Clamped Inductive Switching (SCIS) capability. The device includes internal diodes for ESD protection of the logic level gate, along with series and shunt resistors in the gate circuit. It operates within a junction temperature range of -40°C to +175°C and has a total power dissipation of 150W at TC = +25°C. The collector-emitter breakdown voltage is 375V with RGE = 1kΩ, and the continuous collector current is 20A at VGE = 5.0V.
Feature Summary
- Logic level gate drive capability
- Internal voltage clamp for SCIS functionality
- Integrated ESD gate protection
Applications
- Automotive ignition coil drivers
- Ignition circuits requiring self-clamped inductive switching
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package type matches TO-263AB requirements. Check datasheet revision status as the product may be obsolete. Ensure thermal management design accounts for 150W dissipation limits. Validate gate resistor values align with internal resistance specifications.
Selection Notes
Select this component for applications requiring logic level interface without external gate drive complexity. Consider the internal clamping feature for inductive load switching where voltage spikes must be contained. Evaluate thermal performance based on case temperature constraints. Verify compatibility with automotive ignition system voltage levels and current demands.
Part Context
This part belongs to the Fairchild Semiconductor IGBT portfolio, later acquired by onsemi. It is designed specifically for high-voltage switching applications in automotive environments. The device integrates multiple protection features into a single package to simplify circuit design for ignition systems.
Replacement Considerations
HGT1S20N35G3VL: Same electrical characteristics but in TO-262AA package. HGTP20N35G3VL: Same electrical characteristics but in TO-220AB package. HGT1S20N35G3VLS9A: Tape and reel packaging variant of the same device.
