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Product Detailed Parameters
- Description：IGBT 600V 6A I2PAK
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：6:00 AM
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 3A
- Power - Max：33 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：13.8 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：I2PAK (TO-262)
- Grade：-
- Qualification：-
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Overview
The HGT1S3N60C3D is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector current of 6 A and a collector-emitter breakdown voltage of 600 V. The device is housed in a TO-263AB surface-mount package with three pins. This component belongs to the rugged UFS series, designed for high-performance switching applications requiring low conduction loss.
Feature Summary
- Integrated anti-parallel ultrafast recovery diode for efficient commutation
- Rugged design optimized for high reliability in power circuits
- Low conduction loss characteristics for improved thermal performance
Applications
- High-frequency switch-mode power supplies
- Motor control inverters
- Uninterruptible power systems
Procurement Notes
Verify manufacturer lineage as Harris Corporation assets were acquired by Fairchild Semiconductor and subsequently Renesas Electronics. Confirm that the specific part number corresponds to the original Harris specification or its direct successor documentation. Ensure the datasheet matches the required electrical parameters and package dimensions before integration into designs.
Selection Notes
Select this component for applications requiring a compact surface-mount IGBT with integrated freewheeling diode. The 6 A rating suits moderate power levels where TO-263AB packaging provides adequate thermal management. Consider the ultrafast diode recovery time when designing for high-frequency operation to minimize switching losses.
Part Context
This device is part of the C3 series of IGBTs, which are characterized by their ultrafast recovery times and rugged construction. The series was originally developed by Harris Semiconductor and later maintained through corporate acquisitions. It serves as a discrete solution for medium-power switching needs.
Replacement Considerations
Equivalent parts include HGTP12N60C3D and HGTG12N60C3D from Intersil/Renesas, though these offer higher current ratings. Verify pinout compatibility and thermal resistance differences when substituting with devices from other manufacturers such as Fairchild or ON Semiconductor.
