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Product Detailed Parameters
- Description：IGBT 600V 14A TO-262
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 7A
- Power - Max：60 W
- Switching Energy：160µJ (on), 120µJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：26ns/130ns
- Test Condition：480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262 (I2PAK)
- Grade：-
- Qualification：-
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Overview
The HGT1S7N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Harris Semiconductor. It belongs to the UFS series and utilizes Silicon technology in a TO-247-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25°C. Key electrical parameters include a saturation voltage of 1.6 V, gate-emitter voltage limits of ±20 V, and a power dissipation rating of 60 W. The component operates within a temperature range of -40°C to +150°C junction temperature.
Feature Summary
- Single N-channel IGBT configuration designed for high-voltage switching applications
- UFS series architecture providing optimized switching performance
- TO-247-3 through-hole package suitable for robust thermal management
Applications
- Switch-mode power supplies
- Motor control inverters
- Induction heating systems
Procurement Notes
Verify the manufacturer status carefully as this component is listed as obsolete or end-of-life by major distributors. Sourcing may be limited to surplus markets or specific legacy inventory holders. Confirm RoHS compliance details directly with the supplier, as regulatory status can vary for discontinued parts. Ensure the TO-247-3 pinout matches your design requirements before procurement.
Selection Notes
Select this component when a 600V, 14A IGBT in a TO-247 package is required for legacy designs. Compare the 1.6V saturation voltage against modern alternatives for efficiency needs. Verify that the 60W power dissipation rating meets the thermal constraints of the target application without excessive heatsinking. Check compatibility with existing gate drive voltages of ±20V.
Part Context
This part is part of the HGT series from onsemi, originally developed under the Harris Semiconductor brand. It represents a standard discrete IGBT solution for medium-power applications. The TO-247-3 package is widely used in industrial equipment. As a legacy part, it serves as a drop-in replacement for older designs utilizing Harris-branded components.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consider checking onsemi's current UFS series equivalents for availability, ensuring voltage, current, and package compatibility.
