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Product Detailed Parameters
- Description：IGBT 600V 50A TO-218-5
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 32A
- Power - Max：208 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：265 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-218-5
- Supplier Device Package：TO-218-5
- Grade：-
- Qualification：-
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Overview
The HGTA32N60E2 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A. The device is designed for through-hole mounting in a TO-218-5 package, providing robust thermal performance with a maximum power dissipation of 208 W. Key electrical characteristics include a gate charge of 265 nC and a standard input type. The component operates within a junction temperature range of -55°C to 150°C, ensuring reliability in demanding industrial environments.
Feature Summary
- High-voltage capability rated at 600 V for robust switching applications
- High current handling with a 50 A continuous collector current rating
- Through-hole construction in a TO-218-5 package for secure mechanical mounting
- Wide operating temperature range supporting extreme environmental conditions
Applications
- Industrial motor drives and control systems
- Switched-mode power supplies (SMPS)
- Inverter circuits for renewable energy systems
- Welding equipment power stages
Procurement Notes
Verify the manufacturer part number against official Harris Corporation or L3Harris Technologies documentation to ensure authenticity. Confirm that the specific suffix 'E2' matches the required specifications, as variations may exist. Check for RoHS compliance status if required by your manufacturing standards. Ensure the supplier provides traceable origin data for quality assurance purposes before finalizing the purchase order.
Selection Notes
Select this component when designing circuits requiring high voltage isolation and significant current capacity. The TO-218-5 package facilitates effective heat dissipation for power levels up to 208 W. Consider the 265 nC gate charge when sizing driver circuits to optimize switching speed and minimize losses. Ensure the application's thermal management strategy can maintain the junction temperature within the specified -55°C to 150°C range during peak operation.
Part Context
Harris Corporation, now integrated into L3Harris Technologies following a 2019 merger, historically specialized in electronic components and surveillance solutions. This IGBT belongs to their power semiconductor portfolio, which supports various industrial and commercial electronics. The product line reflects the company's expertise in high-reliability discrete devices used in critical infrastructure and defense applications.
Replacement Considerations
Consult official cross-reference lists from L3Harris Technologies for verified substitutes. Ensure any replacement maintains identical voltage, current, and package specifications. Verify pinout compatibility and thermal resistance values to prevent circuit modification.
