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The HGTD10N40F1S is an N-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Intersil Corporation. Designed for high voltage applications, this component features a maximum collector-emitter voltage of 400V and a continuous collector current rating of 10A. It exhibits a maximum on-state voltage (VCE(ON)) of 2.5V and a fall time (TFALL) of 1.4µs or less. The device allows direct drive from low power integrated circuits due to its high input impedance.
The HGTD10N40F1S belongs to the HGTD series of N-Channel IGBTs produced by Intersil Corporation. This series includes variants such as the HGTD10N40F1, HGTD10N50F1, and HGTD10N50F1S, which share similar design characteristics but differ in voltage ratings. The component is engineered for high voltage, low on-dissipation environments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should verify compatibility with equivalent IGBTs based on specific electrical requirements and package constraints.