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Product Detailed Parameters
- Description：IGBT NPT 1200V 5.3A TO-252AA
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：5.3 A
- Current - Collector Pulsed (Icm)：6:00 AM
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 1A
- Power - Max：60 W
- Switching Energy：70µJ (on), 90µJ (off)
- Input Type：Standard
- Gate Charge：14 nC
- Td (on/off) @ 25°C：15ns/67ns
- Test Condition：960V, 1A, 82Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA
- Grade：-
- Qualification：-
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Overview
The HGTD1N120BNS9A is a Non-Punch Through (NPT) N-Channel Insulated Gate Bipolar Transistor manufactured by onsemi. It features a TO-252AA package with the '9A' suffix indicating tape and reel packaging. The device supports a collector-emitter voltage of 1200V and a continuous collector current of 5.3A at 25°C case temperature. Key electrical parameters include a saturation voltage of 2.9V maximum at 1.0A, gate threshold voltage of 7.1V typical, and total power dissipation of 60W. Thermal resistance from junction to case is 2.1°C/W.
Feature Summary
- Non-Punch Through (NPT) design combining MOSFET input impedance with bipolar transistor low conduction loss
- Rated for short circuit withstand conditions under specified gate drive voltages
- Capable of avalanche energy absorption up to 10 mJ
- Includes temperature compensating SABER model and SPICE model for simulation
Applications
- AC and DC motor controls
- Power supplies
- Drivers for solenoids, relays, and contactors
Procurement Notes
Verify the complete part number including the '9A' suffix when ordering to ensure receipt of the TO-252AA package in tape and reel format. Confirm that the component meets RoHS requirements if applicable to your manufacturing process. Check for any system integration naming changes due to the Fairchild Semiconductor acquisition by onsemi, as underscore characters in legacy part numbers may have been replaced with dashes.
Selection Notes
Select this component for moderate frequency high voltage switching applications where low conduction losses are essential. Ensure the operating junction temperature remains within the -55°C to 150°C range. Consider the thermal resistance and power derating characteristics when designing heat sinks. Verify that the gate drive voltage does not exceed the maximum ratings to prevent oxide layer damage.
Part Context
This IGBT belongs to the MOS gated high voltage switching family originally developed by Fairchild Semiconductor. The product line integrates the high input impedance of MOS technology with the low on-state conduction loss of bipolar transistors. The specific part HGTD1N120BNS9A represents the surface mount variant packaged in TO-252AA, distinct from the through-hole TO-220AB version.
Replacement Considerations
HGTD1N120BNS
FAQ
What is the function of the '9A' suffix in the part number?
The '9A' suffix indicates that the device is supplied in tape and reel packaging rather than standard tube packaging.
Is there an internal Zener diode for gate protection?
No, these devices do not have an internal monolithic Zener diode from gate to emitter; external protection is recommended if required.
How is the turn-off energy loss defined?
Turn-off energy loss is defined as the integral of instantaneous power loss starting at the trailing edge of the input pulse and ending when the collector current equals zero.
