HGTD3N60C3S9A

Overview

The HGTD3N60C3S9A is a 600 V, 6 A N-channel Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor's UFS series. It features Ultra Fast Switching technology with a collector-emitter saturation voltage of 1.65 V at 6 A and a gate charge of 275 nC. The device is housed in a TO-252AA (DPAK) surface-mount package, designed for high-efficiency power conversion applications requiring fast switching speeds and low conduction losses.

Feature Summary

• Ultra Fast Switching (UFS) architecture for reduced switching losses
• Low collector-emitter saturation voltage for efficient conduction
• Surface-mount TO-252AA package for compact PCB integration

Applications

• High-frequency DC-DC converters
• Motor drive inverters
• Uninterruptible Power Supplies (UPS)
• Switch-mode power supplies (SMPS)

Procurement Notes

Verify the manufacturer part number against official Fairchild or onsemi documentation to ensure authenticity. Confirm that the component matches the specified TO-252AA package and electrical ratings. Check for any obsolescence notices or lifecycle status updates from the manufacturer before procurement.

Selection Notes

Select this IGBT for designs requiring 600 V blocking capability and moderate current handling up to 6 A. The UFS technology makes it suitable for applications prioritizing switching speed over pure conduction efficiency. Ensure thermal management solutions are adequate for the 33 W power dissipation rating in the TO-252AA package.

Part Context

This component belongs to Fairchild's UFS series of N-channel IGBTs, which are engineered for high-speed switching applications. The series typically offers a balance between low saturation voltage and fast turn-off characteristics, making it distinct from standard or soft-switching IGBT variants used in different power ranges.