HGTD8P50G1S

HGTD8P50G1S

$0.67
  • Description:IGBT 500V 12A TO-252AA
  • Series:-

SKU:2d99df22cf0b Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 500V 12A TO-252AA
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):500 V
  • Current - Collector (Ic) (Max):12:00 AM
  • Current - Collector Pulsed (Icm):18 A
  • Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 3A
  • Power - Max:66 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:30 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252AA
  • Grade:-
  • Qualification:-

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HGTD8P50G1S

Overview

The HGTD8P50G1S is a P-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Harris Corporation. It is designed for high voltage applications with low on-dissipation characteristics. The device features a maximum collector current of 8A and a breakdown voltage of 500V. It is housed in a surface mount TO-252AA package, offering a maximum power dissipation of 66W.

Feature Summary

  • P-channel enhancement-mode IGBT design
  • Optimized for high voltage operation
  • Low on-state dissipation performance

Applications

  • High voltage switching circuits
  • Power supply modules
  • Industrial motor control systems

Procurement Notes

Verify the manufacturer origin, as Harris Corporation assets were acquired by Renesas Electronics. Ensure the component matches the specific datasheet specifications for the HGTD8P50G1S variant to confirm electrical parameters and package integrity before procurement.

Selection Notes

Select this component for applications requiring P-channel IGBT functionality in a surface mount format. Consider the 500V rating and 8A current capacity against system requirements. Verify thermal management capabilities for the TO-252AA package under expected load conditions.

Part Context

This part belongs to the HGTD series of P-channel IGBTs from Harris Corporation. It is functionally similar to the HGTD8P50G1, differing primarily in packaging or suffix designation. The series targets high-efficiency power switching solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with Renesas Electronics product lines if sourcing from original manufacturer successors.

HGTD8P50G1SHGTD8P50G1S
$0.67
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