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The HGTD8P50G1S is a P-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Harris Corporation. It is designed for high voltage applications with low on-dissipation characteristics. The device features a maximum collector current of 8A and a breakdown voltage of 500V. It is housed in a surface mount TO-252AA package, offering a maximum power dissipation of 66W.
Verify the manufacturer origin, as Harris Corporation assets were acquired by Renesas Electronics. Ensure the component matches the specific datasheet specifications for the HGTD8P50G1S variant to confirm electrical parameters and package integrity before procurement.
Select this component for applications requiring P-channel IGBT functionality in a surface mount format. Consider the 500V rating and 8A current capacity against system requirements. Verify thermal management capabilities for the TO-252AA package under expected load conditions.
This part belongs to the HGTD series of P-channel IGBTs from Harris Corporation. It is functionally similar to the HGTD8P50G1, differing primarily in packaging or suffix designation. The series targets high-efficiency power switching solutions.
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with Renesas Electronics product lines if sourcing from original manufacturer successors.