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Product Detailed Parameters
- Description：IGBT 600V 54A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：96 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
- Power - Max：167 W
- Switching Energy：55µJ (on), 50µJ (off)
- Input Type：Standard
- Gate Charge：78 nC
- Td (on/off) @ 25°C：17ns/96ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG12N60A4D is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 54 A at 25°C. The device utilizes a TO-247 package with three pins for through-hole mounting. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a collector-emitter saturation voltage of 1.8 V, and a power dissipation rating of 167 W. The operating junction temperature range spans from -55°C to +150°C.
Feature Summary
- Combines MOSFET high input impedance with bipolar transistor low conduction loss characteristics
- Integrated ultra-fast recovery anti-parallel diode for efficient switching applications
- Optimized for high-frequency switching mode power supplies (SMPS)
- Low saturation voltage reduces conduction losses in high-voltage circuits
Applications
- High-frequency Switching Mode Power Supplies (SMPS)
- Motor control systems
- Inverter circuits
- High-voltage switching applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for End-of-Life (EOL) notices or Production Change Notices (PCN). Ensure the specific suffix matches the required package variant. Request original datasheets and material composition declarations for regulatory adherence before finalizing procurement decisions.
Selection Notes
Select this component when a 600V blocking capability and approximately 54A continuous current handling are required in a TO-247 form factor. Consider the 1.8V saturation voltage for thermal management efficiency. Verify that the application circuit supports the necessary gate drive voltage limits of ±20V. Evaluate thermal resistance requirements against the 167W dissipation rating for the specific enclosure design.
Part Context
This part belongs to the HGTG series of IGBTs produced by onsemi, continuing the legacy of Fairchild Semiconductor's power discrete products. The HGTG12N60A4D is designed for robust performance in industrial and consumer power electronics. It represents a standard solution for medium-power high-voltage switching tasks where reliability and low conduction loss are critical design constraints.
Replacement Considerations
Cross-reference with HGTG30N60A4D for higher current capacity (75A) in similar packages. Check HGT1S12N60A4S9A for surface-mount TO-263 alternatives. Verify pinout compatibility and thermal characteristics before substituting any equivalent parts from other manufacturers.
