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Product Detailed Parameters
- Description：IGBT NPT 1200V 54A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：165 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 18A
- Power - Max：390 W
- Switching Energy：800µJ (on), 1.8mJ (off)
- Input Type：Standard
- Gate Charge：165 nC
- Td (on/off) @ 25°C：23ns/170ns
- Test Condition：960V, 18A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG18N120BN is a Non-Punch Through (NPT) N-Channel Insulated Gate Bipolar Transistor manufactured by Fairchild Semiconductor, now part of onsemi. It features a collector-emitter voltage rating of 1200V and a continuous collector current of 54A at a case temperature of 25°C. The device operates within a junction temperature range of -55°C to 150°C and utilizes a TO-247 package with a thermal resistance from junction to case of 0.32°C/W. It includes short-circuit withstand capabilities and avalanche energy ratings.
Feature Summary
- Non-Punch Through (NPT) design combining MOSFET input impedance with bipolar transistor conduction characteristics
- Capable of handling 1200V switching Safe Operating Area conditions
- Includes short-circuit withstand time and avalanche energy rating for robust operation
- Features a temperature compensating SABER model for circuit simulation
Applications
- AC and DC motor controls
- Power supplies and drivers for solenoids
- Drivers for relays and contactors
Procurement Notes
Verify the manufacturer origin as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm the specific revision status and datasheet version when sourcing, as legacy documentation may vary between distributors. Ensure the TO-247 package type matches your thermal management requirements.
Selection Notes
Select this component for moderate frequency high-voltage switching applications where low conduction losses are critical. Evaluate the thermal derating curve for case temperatures above 25°C to ensure the continuous collector current remains sufficient for the load. Consider the gate drive voltage options of 12V or 15V based on the required saturation voltage and switching speed trade-offs.
Part Context
This device belongs to the MOS gated high voltage switching IGBT family. It serves as a successor to developmental types such as TA49288. The technology integrates the high input impedance of MOSFETs with the low on-state conduction loss typical of bipolar transistors, making it suitable for general purpose industrial power electronics.
Replacement Considerations
Check for equivalents in the same voltage and current class from other manufacturers offering NPT IGBTs in TO-247 packages. Verify pinout compatibility and thermal resistance specifications before substitution.
