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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
- Power - Max：290 W
- Switching Energy：105µJ (on), 150µJ (off)
- Input Type：Standard
- Gate Charge：142 nC
- Td (on/off) @ 25°C：15ns/73ns
- Test Condition：390V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG20N60A4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a silicon technology base and utilizes a TO-247-3 through-hole package for mounting. The device is rated for a maximum collector-emitter voltage of 600 V and supports a continuous collector current of 70 A at 25 °C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 290 W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Combines high input impedance with low conduction losses typical of bipolar transistors
- Optimized for fast switching applications in switch mode power supplies
- Designed for robust performance in high-power industrial environments
Applications
- Switch Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
- Welding machines
Procurement Notes
Verify the End-of-Life status before design integration, as this component is marked for obsolescence by the manufacturer. Confirm RoHS and REACH compliance details via official datasheets. Ensure supply chain stability due to potential discontinuation risks associated with legacy product lines.
Selection Notes
Select this IGBT for designs requiring 600V blocking capability and up to 70A continuous current handling. The TO-247-3 package suits through-hole PCB layouts. Verify thermal management requirements against the 290W dissipation rating and ensure gate drive voltages remain within the specified ±20V limits for reliable operation.
Part Context
This part belongs to the HGTG series of IGBTs from onsemi, originally developed under Fairchild Semiconductor. The series targets high-efficiency power conversion applications. The HGTG20N60A4 specifically offers a balance of voltage rating and current capacity suitable for medium-power industrial electronics.
Replacement Considerations
Check for direct pin-compatible substitutes within the same voltage and current class. Consider the HGTG30N60A4D for higher current needs or NGTG20N60L2TF1G for different packaging requirements, ensuring all electrical parameters match the original design constraints.
