HGTG24N60D1

$7.59

Description：IGBT 600V 40A TO-247
Series：-

SKU:45279a82c56e Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A TO-247
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：96 A
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 24A
Power - Max：125 W
Switching Energy：-
Input Type：Standard
Gate Charge：155 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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HGTG24N60D1

Overview

The HGTG24N60D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, now part of onsemi. It features a collector-emitter breakdown voltage (VCEO) of 600 V and a continuous collector current (Ic) of 24 A at 25°C. The device utilizes Ultrafast Soft (UFS) switching technology to minimize reverse recovery charge and tail current. It is housed in a TO-247 package with a maximum power dissipation of 104 W. The component operates within a temperature range of -40°C to +150°C.

Feature Summary

Ultrafast Soft (UFS) switching technology for reduced electromagnetic interference
Integrated anti-parallel ultrafast recovery diode
Rugged design optimized for high-voltage industrial applications

Applications

High-frequency switch-mode power supplies
Motor control drives
Inverter circuits

Procurement Notes

Verify the manufacturer status as Harris Corporation assets were acquired by Fairchild Semiconductor, which was subsequently acquired by onsemi. Confirm that the specific lot date code aligns with legacy production schedules. Ensure the datasheet version matches the manufacturing era to validate electrical characteristics against current standards.

Selection Notes

Select this component when a 600V rating and 24A current capacity are required in a through-hole TO-247 package. The UFS characteristic makes it suitable for applications demanding lower switching losses and reduced noise compared to standard IGBTs. Verify thermal management requirements given the 104W power dissipation limit.

Part Context

This part belongs to the HGTG series of rugged, high-voltage IGBTs originally developed by Harris Semiconductor. The series is characterized by its use of UFS technology, providing a balance between low conduction loss and fast switching performance. It serves as a discrete solution for medium-power conversion tasks.

Replacement Considerations

Direct replacements include the HGTP12N60C3D or HGTG12N60C3D from onsemi/Fairchild, noting potential differences in packaging or exact current ratings. Cross-reference with other 600V, 24A UFS IGBTs from manufacturers like Infineon or Mitsubishi if pinout compatibility is critical.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.