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The HGTG24N60D1D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 40 A. The device is housed in a TO-247 through-hole package, designed for high-power switching applications. It operates within a junction temperature range of -55°C to 150°C. The component combines MOS gate input characteristics with bipolar transistor output capabilities, offering efficient control for high-voltage circuits.
Verify the manufacturer designation as Harris Corporation or Intersil, noting corporate acquisitions may affect documentation sources. Confirm the TO-247 package style and through-hole mounting requirement matches your PCB layout. Ensure the 600V rating aligns with your system's voltage stress requirements. Cross-reference datasheet revisions for any parameter updates.
Select this component when a 600V blocking capability and 40A continuous current handling are required in a standard through-hole format. Consider the TO-247 package for its thermal dissipation properties relative to smaller packages. Evaluate the gate charge specifications against your driver's current sourcing capabilities to ensure adequate switching speeds.
This part belongs to the UFS Series of N-channel IGBTs from Harris Corporation. It is designed for general-purpose high-power switching. The series emphasizes reliability and ease of use in industrial environments. Related parts in the lineup may offer different voltage ratings or current capacities while maintaining similar packaging standards.
Direct substitutes must match the 600V, 40A, TO-247 specification. Verify pinout compatibility before substitution. Check thermal resistance values to ensure equivalent heat dissipation performance. Review gate threshold voltage ranges to confirm interface compatibility with existing drive circuits.