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Product Detailed Parameters
- Description：IGBT 600V 54A TO-247
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：108 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 27A
- Power - Max：208 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：212 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
Download product information
Overview
The HGTG27N60C3DR is a 27 A, 600 V N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It utilizes Ultrafast Soft-switching (UFS) technology to minimize switching losses and electromagnetic interference. The device integrates an anti-parallel ultrafast recovery diode within the TO-247 package. Key electrical parameters include a collector-emitter saturation voltage of 1.95 V at 27 A and a maximum gate-emitter voltage rating of ±20 V. Designed for high-power applications, it offers rugged performance with a continuous power dissipation capability suitable for demanding industrial environments.
Feature Summary
- Integrates an anti-parallel ultrafast recovery diode for efficient commutation
- Utilizes Ultrafast Soft-switching (UFS) technology to reduce switching losses
- Features a rugged N-channel IGBT structure optimized for high-current operation
Applications
- High-frequency switch-mode power supplies
- Motor control drives and inverters
- Industrial welding equipment
Procurement Notes
Verify the manufacturer origin carefully, as Harris Semiconductor assets were acquired by L3Harris Technologies. Confirm that the specific part number corresponds to the original Harris datasheet specifications rather than subsequent rebranding variations from other distributors or successor entities to ensure technical compatibility.
Selection Notes
Select this component when a 600 V blocking voltage and 27 A continuous current rating are required in a TO-247 form factor. Ensure the application benefits from UFS characteristics for reduced EMI. Verify thermal management requirements against the specified power dissipation limits and junction temperature ratings provided in the official documentation.
Part Context
This component belongs to the HGTG series of UFS IGBTs originally developed by Harris Semiconductor. The series was widely adopted in power electronics before the division's acquisition. The 'DR' suffix typically indicates a tape-and-reel packaging configuration for automated assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided reference material. Cross-reference with equivalent 600 V, 27 A UFS IGBTs from current manufacturers only after verifying pinout and thermal compatibility.
