HGTG30N60C3D

Overview

The HGTG30N60C3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series, manufactured by Fairchild Semiconductor. It integrates an anti-parallel hyperfast recovery diode within a TO-247-3 flange mount package. The device is rated for a collector-emitter voltage of 600 V and a continuous collector current of 63 A at 25°C. Key electrical parameters include a maximum power dissipation of 208 W, a typical fall time of 230 ns at 150°C junction temperature, and a short-circuit rating capability. It operates within a temperature range of -40°C to +150°C.

Feature Summary

• Combines MOSFET high input impedance with bipolar transistor low conduction loss characteristics
• Integrates an anti-parallel hyperfast recovery diode for efficient switching applications
• Features a short-circuit rating for enhanced robustness in high-voltage switching circuits

Applications

• High voltage switching applications requiring moderate frequency operation
• Switching mode power supplies (SMPS)
• Motor control systems

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels due to potential availability constraints. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Check for obsolescence notices as the product lifecycle status may indicate end-of-life phases. Ensure thermal management solutions align with the specified 208 W power dissipation limits under operating conditions.

Selection Notes

Select this component for designs prioritizing low on-state voltage drop and reduced conduction losses over moderate switching frequencies. The integrated hyperfast diode eliminates the need for external parallel diodes in specific topologies. Evaluate thermal resistance requirements carefully given the TO-247-3 package constraints and the 208 W dissipation rating. Compare against alternative IGBTs if higher current ratings or different packaging formats are required.

Part Context

This device belongs to the Fairchild UFS Series of IGBTs, designed for high-efficiency power conversion. Originally developed as type TA49014, it utilizes the TA49051 IGBT chip and TA49053 diode chip. The series emphasizes low conduction loss and fast recovery characteristics suitable for demanding industrial and commercial power electronics environments.

Replacement Considerations

Direct substitutes may include other Fairchild or Renesas IGBTs from the same family with identical pinouts and electrical ratings. Verify compatibility of gate drive requirements and thermal characteristics when cross-referencing datasheets.