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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：330 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：290 W
- Switching Energy：1.05mJ (on), 800µJ (off)
- Input Type：Standard
- Gate Charge：250 nC
- Td (on/off) @ 25°C：47ns/170ns
- Test Condition：480V, 40A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG40N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi's UFS Series, manufactured using silicon technology. It features a TO-247-3 through-hole package with a collector-emitter maximum voltage (VCEO) of 600 V and a continuous collector current (Ic) of 70 A at 25 °C. The device exhibits a low collector-emitter saturation voltage (VCE(sat)) of 1.4 V. It supports a power dissipation (Pd) of 290 W and operates within a junction temperature range of -55 °C to +150 °C. The gate-emitter voltage limits are specified between -20 V and +20 V, with a maximum gate-emitter leakage current of 100 nA.
Feature Summary
- Utilizes Ultra Fast Soft (UFS) technology for optimized switching performance.
- Designed for high-efficiency power conversion with low saturation voltage characteristics.
- Robust construction suitable for demanding industrial thermal environments.
Applications
- High-frequency switch-mode power supplies
- Motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify component authenticity through authorized distribution channels due to the product's end-of-life status. Confirm RoHS compliance details via official datasheets before integration. Ensure storage conditions meet semiconductor handling standards to prevent degradation. Validate pinout compatibility with existing PCB footprints during the design-in phase.
Selection Notes
Select this component for applications requiring 600 V blocking capability and high current handling up to 70 A. Consider the TO-247-3 package for efficient heat sinking requirements. Evaluate thermal management solutions to maintain junction temperatures within the specified operational limits under full load conditions.
Part Context
This IGBT belongs to onsemi's UFS Series, which integrates ultra-fast soft recovery diodes. The series targets high-performance power electronics where switching speed and efficiency are critical. It serves as a discrete solution for medium-power inverter stages in industrial and consumer applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify electrical parameter compatibility with alternative devices if sourcing new inventory is required.
