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Product Detailed Parameters
- Description：IGBT NPT 1200V 21A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：21 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 5A
- Power - Max：167 W
- Switching Energy：450µJ (on), 390µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：22ns/160ns
- Test Condition：960V, 5A, 25Ohm, 15V
- Reverse Recovery Time (trr)：65 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG5N120BND is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 5 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.0 V, a gate-emitter leakage current of 250 nA, and a power dissipation rating of 65 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrated anti-parallel diode for simplified circuit design
- Hyperfast switching characteristics for high efficiency
- Robust thermal performance in standard through-hole packaging
Applications
- Mini-UPS systems
- Home-use power conditioners
- Photovoltaic power generation inverters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and internal diode specifications. Confirm RoHS compliance status directly with the supplier or manufacturer documentation before procurement. Check for obsolescence notices as this component may be subject to lifecycle changes.
Selection Notes
Select this component when a low-current, high-voltage IGBT with an integrated freewheeling diode is required. Ensure the application demands the specific switching speed and saturation voltage characteristics provided by the Hyperfast series. Verify that the thermal management solution can handle the specified power dissipation limits under operating conditions.
Part Context
This part belongs to the HGTG series of fast discrete IGBTs from onsemi. These devices are engineered to balance low on-state voltage with high-speed switching capabilities. The series targets applications requiring improved power conversion efficiency and reduced device size in renewable energy and backup power systems.
Replacement Considerations
Consult the official onsemi cross-reference guide for verified substitutes. Ensure any replacement maintains the TO-247-3 package, 1200V rating, and integrated diode configuration. Verify that thermal and electrical parameters meet or exceed the original specifications.
