SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The HGTH20N50EID is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It is designed for high-voltage switching applications, featuring a 500V collector-emitter voltage rating and a continuous collector current capacity of 20A. The device utilizes standard gate input characteristics suitable for direct drive from logic-level drivers. It is housed in a through-hole package, facilitating robust thermal management and mechanical stability in power electronics circuits requiring reliable high-power switching performance.
Verify the manufacturer origin, as Harris Corporation assets were acquired by Microchip Technology. Confirm the specific datasheet version corresponding to the original Harris publication or the subsequent Microchip continuation to ensure parameter accuracy. Check RoHS compliance status, as legacy components may have varying environmental declarations depending on the production batch and acquisition timeline.
Select this component when a 500V blocking capability and 20A continuous current are required in a through-hole format. Ensure the application's switching frequency aligns with the device's turn-off time specifications. Verify that the gate drive voltage levels match the standard input requirements to guarantee proper saturation and minimize conduction losses during operation.
This part belongs to the family of single IGBTs produced by Harris Corporation before its semiconductor division was acquired. It represents a discrete power switch solution distinct from integrated modules. The designation indicates specific electrical ratings within the broader portfolio of high-voltage transistors available from the original manufacturer and its successors.