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Product Detailed Parameters
- Description：IGBT NPT 1200V 35A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 10A
- Power - Max：298 W
- Switching Energy：320µJ (on), 800µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：23ns/165ns
- Test Condition：960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The HGTP10N120BN is an N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi's NPT series. It features a 1200V collector-emitter voltage rating and a continuous collector current of 10A at 25°C. The device utilizes Non-Punch-Through technology to ensure robust performance under high-voltage conditions. It is designed for efficient power switching in various industrial applications, offering reliable operation with optimized thermal characteristics suitable for medium-power conversion systems.
Feature Summary
- Non-Punch-Through (NPT) technology for enhanced ruggedness
- Optimized for low conduction losses
- Suitable for high-frequency switching applications
Applications
- Industrial motor drives
- Uninterruptible Power Supplies (UPS)
- Switching power supplies
Procurement Notes
Verify the exact ordering suffix and package variant against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and specific thermal resistance values required for your heatsink design. Ensure the gate drive voltage specifications match your control circuitry to prevent device damage or incomplete switching.
Selection Notes
Select this component when a 1200V blocking capability and 10A continuous current are required in a compact package. Consider the thermal resistance parameters for your specific PCB layout or heatsink configuration. Verify that the switching frequency requirements align with the device's turn-on and turn-off time specifications to minimize switching losses effectively.
Part Context
This IGBT belongs to onsemi's discrete power transistor lineup, specifically targeting medium-power industrial applications. It complements other devices in the NPT series by providing a balance between voltage handling and current capacity. The component is part of a broader portfolio designed for energy efficiency in power conversion systems.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains similar Vce(sat) and switching speed characteristics. Ensure the replacement package type matches your existing board footprint and thermal management strategy.
