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The HGTP10N40C1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter voltage rating of 400 V and a continuous collector current capacity of 10 A. The device is designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 60 W. It operates within a junction temperature range of -55°C to 150°C.
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Select this IGBT for applications requiring moderate current handling at 400 V levels. Ensure the circuit design accommodates the 60 W power dissipation limit. Verify that the TO-220-3 package fits the available PCB space and thermal management infrastructure.
This component belongs to the HGTP series of single IGBTs from Harris Corporation. It is part of a family offering various voltage and current ratings, including 500 V variants like the HGTP15N50C1. The series targets general-purpose industrial switching applications.
Public confirmed substitute part numbers are not provided in the source data. Cross-reference with other 400V 10A TO-220-3 IGBTs only after verifying absolute maximum ratings and thermal resistance parameters.