HGTP10N40E1

Overview

The HGTP10N40E1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector-emitter voltage of 400 V and a continuous collector current rating of 10 A. The device is housed in a TO-220-3 through-hole package with a flange mount configuration, utilizing plastic/epoxy material. It has a maximum power dissipation of 60 W and operates within a temperature range up to 150 °C. The component is classified as a single-element silicon transistor with three terminals.

Feature Summary

• N-channel IGBT configuration for high-speed switching applications
• Through-hole TO-220-3 package with flange mount for thermal management
• Capable of handling 400V blocking voltage and 10A continuous current

Applications

• High-frequency power switching circuits
• Motor drive inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by On Semiconductor. Ensure the specific part number matches the original Harris datasheet specifications rather than generic equivalents. Confirm the package type is TO-220-3 and check for any suffix variations that might indicate different binning or testing conditions. Cross-reference with current distributor catalogs to confirm availability status and authenticity of the Harris-branded component.

Selection Notes

Select this component when a robust N-channel IGBT is required for medium-power applications involving voltages up to 400 V. The TO-220-3 package facilitates easy mounting on heat sinks due to its flange design. Consider the 10 A current rating and 60 W power dissipation limits to ensure adequate thermal management in the final design. This device is suitable for designs prioritizing the specific electrical characteristics and packaging of the original Harris product line.

Part Context

The HGTP10N40E1 belongs to the family of single IGBTs produced by Harris Corporation before its semiconductor division was acquired. It represents a standard discrete power switch designed for industrial and consumer electronics applications requiring reliable high-voltage switching. The component is distinct from MOSFETs by its bipolar conduction characteristics, offering lower on-state voltage drops at higher currents compared to unipolar devices.

Replacement Considerations

On Semiconductor is the successor to Harris Semiconductor. Verify if On Semiconductor offers direct pin-compatible replacements such as the STP10NF40L or similar N-channel IGBTs with matching 400V/10A ratings. Ensure thermal resistance and gate charge parameters are compatible with the existing circuit design.