HGTP10N40F1D

Overview

The HGTP10N40F1D is an N-channel enhancement-mode Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. Designed for high-voltage applications, this component features a maximum collector-emitter voltage of 400V and a continuous collector current rating of 10A. It exhibits a maximum on-state voltage (VCE(ON)) of 2.5V and a fall time (TFALL) of 1.4µs or less. The device operates within a temperature range of -55°C to 150°C and is housed in a TO-247 package.

Feature Summary

• High input impedance allowing direct drive from low-power integrated circuits
• Low on-state voltage for reduced conduction losses
• Fast switching speeds suitable for high-frequency operation

Applications

• Switching regulators
• Motor drives
• Protective circuits

Procurement Notes

Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by Intersil, which was subsequently acquired by Renesas Electronics. Ensure the specific part number matches the intended vintage or current production status. Request detailed datasheets to confirm electrical characteristics and pinout compatibility before integration into designs.

Selection Notes

Select this IGBT for applications requiring robust high-voltage handling with moderate current capabilities. The 400V rating suits general-purpose power conversion, while the 10A current capacity supports various motor control loads. Consider thermal management requirements due to the 2.5V VCE(ON), ensuring adequate heat sinking for sustained operation at rated currents.

Part Context

This component belongs to the HGTP series of N-channel IGBTs, designed for high-voltage, low on-dissipation applications. The series is characterized by fast switching speeds and high input impedance, making it suitable for direct interfacing with low-power logic ICs without additional driver circuitry complexity.