HGTP10N50E1

Overview

The HGTP10N50E1 is a high-voltage N-channel Power MOSFET manufactured by Harris Corporation. It features a planar edge termination technology designed to improve ruggedness and reliability under harsh electrical conditions. The device is housed in a TO-247 package, providing robust thermal performance for power switching applications. Key electrical parameters include a drain-source voltage (V_DSS) of 500 V and a continuous drain current (I_D) of 10 A at 25°C. The on-state resistance (R_DS(on)) is typically 0.65 ohms at a gate-source voltage of 10 V. These specifications make it suitable for use in motor control, DC-DC converters, and general-purpose power switching circuits where high voltage handling and moderate current capacity are required.

Feature Summary

• Planar edge termination technology enhances ruggedness and avalanche capability
• Fast switching characteristics optimized for high-frequency operation
• Low on-state resistance for improved efficiency and reduced conduction losses
• Robust TO-247 package design for effective heat dissipation

Applications

• Motor control inverters and drives
• DC-DC converter topologies
• General-purpose power switching circuits

Procurement Notes

Verify the manufacturer origin carefully, as Harris Semiconductor assets were acquired by other entities. Ensure the component matches the original Harris specification sheet rather than a generic equivalent. Check for date codes and lot traceability to confirm authenticity. Request detailed test reports if used in safety-critical systems. Confirm package integrity and pinout compatibility with existing PCB footprints before integration.

Selection Notes

Select this component when a 500 V rating is necessary but higher voltage devices offer no benefit. Compare R_DS(on) values against alternatives to ensure thermal management requirements are met within the TO-247 package limits. Consider the gate charge specifications if driving speed is critical for the specific application frequency. Verify that the continuous current rating aligns with the peak load demands of the circuit design.

Part Context

Harris Semiconductor was a prominent manufacturer of discrete power devices before its acquisition. The HGTP series represents their line of high-voltage MOSFETs utilizing advanced planar technologies. This specific model belongs to a family designed for industrial and consumer power applications requiring reliable high-voltage switching capabilities.

Replacement Considerations

Check for direct replacements from Vishay or STMicroelectronics with identical pinouts and electrical ratings. Verify that any substitute maintains the same TO-247 package dimensions and thermal characteristics. Ensure the replacement device meets or exceeds the original V_DSS and I_D specifications.