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The HGTP12N60C3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 600 V and supports a continuous collector current of 24 A at 25°C. The device utilizes the Ultra Fast Soft (UFS) technology to minimize switching losses. It is housed in a TO-220AB package with a flange mount style, where the collector is connected to the case. The maximum power dissipation is rated at 104 W, and it operates within a temperature range from -40°C to +150°C.
This component belongs to the HGTG/HGTP series of IGBTs from onsemi, designed for medium-power applications requiring high efficiency. The HGTP variant specifically denotes the TO-220AB flange-mount package configuration, distinguishing it from other pin-out or thermal options within the same electrical family.