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Product Detailed Parameters
- Description：IGBT 400V 7.5A TO-220
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：7.5 A
- Current - Collector Pulsed (Icm)：7.5 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 10V, 3A
- Power - Max：75 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：6.9 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The HGTP6N40E1D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 400 V and a continuous collector current rating of 7.5 A. The device is designed for through-hole mounting in a TO-220 package, with a maximum power dissipation capability of 75 W. It operates within a temperature range of -55°C to 150°C junction temperature. The component utilizes silicon technology and is classified as a single-element power transistor suitable for switching applications.
Feature Summary
- N-channel IGBT configuration for high-efficiency switching
- Robust 400V breakdown voltage rating
- Through-hole TO-220 package for secure mounting
- High thermal tolerance up to 150°C
Applications
- Industrial motor control systems
- Power supply inverters
- High-frequency switching circuits
- AC/DC conversion modules
Procurement Notes
Verify the manufacturer part number HGTP6N40E1D against official Harris Corporation documentation to confirm specifications. Note that this component is identified as non-RoHS compliant in available records. Ensure compatibility with existing thermal management solutions due to the 75W dissipation rating. Confirm package integrity for TO-220 through-hole installation before integration into final assemblies.
Selection Notes
Select this IGBT for applications requiring 400V blocking capability and 7.5A continuous current handling. The TO-220 form factor supports direct board mounting without surface-mount reflow processes. Consider the 150°C maximum junction temperature when designing heat sinks. Verify gate drive requirements align with standard logic levels if applicable, though specific Vgs thresholds are not detailed in the provided summary data.
Part Context
This component belongs to the Harris Corporation discrete semiconductor portfolio, specifically within their power transistor lineup. It serves as a replacement or primary switch in medium-power electronic designs. The 74HC and CD series mentioned in broader contexts represent digital logic families, distinct from this analog power device. The HGTP6N40E1D is functionally isolated from the CD74HC4046AE PLL and CD4517BE shift register components.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Cross-reference with other 400V, 7.5A N-channel IGBTs in TO-220 packages only after verifying electrical characteristics match the original datasheet requirements.
