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Product Detailed Parameters
- Description：IGBT 600V 34A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 7A
- Power - Max：125 W
- Switching Energy：55µJ (on), 60µJ (off)
- Input Type：Standard
- Gate Charge：37 nC
- Td (on/off) @ 25°C：11ns/100ns
- Test Condition：390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The HGTP7N60A4 is a 600V N-Channel Insulated Gate Bipolar Transistor (IGBT) from the SMPS Series, manufactured by onsemi. It integrates an anti-parallel hyperfast diode and utilizes the TA49331 IGBT development type with the TA49370 diode. Designed for high-frequency switching applications, it offers low conduction losses and temperature-compensating characteristics. The device supports operation up to 100kHz at 390V/7A and 200kHz at 390V/5A. Key electrical parameters include a 600V collector-emitter voltage rating, typical fall time of 75ns at 125°C, and robust switching SOA capability.
Feature Summary
- Optimized for high-frequency switch mode power supplies with low conduction losses
- Integrates an anti-parallel hyperfast diode for efficient switching
- Features temperature-compensating SABER model compatibility
Applications
- High frequency switch mode power supplies
- High voltage switching applications requiring low conduction loss
- SMPS series circuits operating above 100kHz
Procurement Notes
Verify component authenticity through authorized onsemi distributors or certified partners. Confirm RoHS compliance status via official datasheets. Check for obsolescence notices as legacy Fairchild products may have limited availability. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage prior to assembly.
Selection Notes
Select this IGBT for designs requiring integrated freewheeling diodes in high-voltage, high-frequency environments. Evaluate thermal management requirements given the 75ns fall time and conduction characteristics. Compare against newer onsemi generations if higher current density or reduced gate charge is needed for modern compact power architectures.
Part Context
Originally developed by Fairchild Semiconductor, this part was acquired by onsemi during their merger. It belongs to the HGT(H,P)7N60A4D family, sharing similar electrical profiles across different package variants like TO-263. The product line represents legacy high-performance IGBT technology optimized for specific SMPS applications before being superseded by newer series.
Replacement Considerations
Direct substitutes include HGTP7N60A4D and HGTG7N60A4D from the same manufacturer family. Verify pinout compatibility and thermal resistance differences when replacing with newer onsemi IGBT models designed for similar 600V SMPS applications.
