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Product Detailed Parameters
- Description：IGBT FIELD STOP 650V 200A TO-247
- Series：-
- Mfr：Watech Electronics
- Package：Bulk
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：424 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 100A
- Power - Max：1.086 kW
- Switching Energy：4.51mJ (on), 2.44mJ (off)
- Input Type：Standard
- Gate Charge：284 nC
- Td (on/off) @ 25°C：84ns/366ns
- Test Condition：400V, 100A, 16Ohm, 15V
- Reverse Recovery Time (trr)：77 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HKQ100N65FMTA is a high-voltage N-channel Power MOSFET manufactured by Watech Electronics. This component is designed for robust power switching applications, featuring a 650V drain-source voltage rating and a 100A continuous drain current capability. The device utilizes advanced trench gate technology to achieve low on-resistance, enhancing energy efficiency in hard-switching environments. It is housed in a thermally optimized package suitable for surface-mount assembly, ensuring reliable thermal dissipation during high-power operations.
Feature Summary
- High breakdown voltage capability for demanding power circuits
- Low on-state resistance for improved conduction efficiency
- Robust avalanche rating for enhanced system reliability
- Optimized thermal performance via specialized package design
Applications
- Industrial motor control systems
- Uninterruptible power supply (UPS) inverters
- High-frequency switch-mode power supplies
- DC-DC converter modules
Procurement Notes
Verify the specific suffix 'FMTA' against the official Watech Electronics datasheet to confirm tape-and-reel packaging specifications and pin configuration. Ensure that the requested quantity aligns with standard manufacturing lot sizes. Cross-reference the date code and lot number with the manufacturer's quality certificates to guarantee authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring high voltage isolation and substantial current handling capabilities. Consider the thermal resistance characteristics of the package for heat sink sizing. Evaluate the gate charge parameters to determine driver requirements for optimal switching speed. Ensure the operating junction temperature remains within safe limits under maximum load conditions to maintain long-term device stability.
Part Context
This part belongs to Watech Electronics' high-voltage MOSFET portfolio, targeting industrial and commercial power conversion markets. The series emphasizes durability and efficiency, supporting the transition toward more compact and powerful electronic systems. It complements other discrete semiconductors offered by the manufacturer for complete power stage solutions.
Replacement Considerations
Consult the official Watech Electronics cross-reference guide for direct substitutes. Verify pin compatibility and electrical parameter equivalence before substitution. Generic replacements may lack identical thermal or switching characteristics.
